Optical properties of In/sub 0.52/Al/sub 0.48/As layers and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As quantum well structures grown on [111]B InP substrates by molecular beam epitaxy

Optical properties were studied for In/sub 0.52/Al/sub 0.48/As layers and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As quantum well (QW) structures grown on [111]B InP substrates. It was found that the photoluminescence (PL) spectrum of the InAlAs layers grown on the[111]B InP substrates had a remarkable dependence on the V/III ratio and the growth temperature. The PL peak energy of the InGaAs/InAlAs QWs grown on the [111]B InP substrates showed a red shift compared with those grown on [100] InP substrates. An atomic force microscopy (AFM) observation revealed that the [111]B InGaAs well is thicker than the [100] InGaAs well.