High power 1.48 /spl mu/m DC-PBH LDs fabricated by all selective MOVPE (ASM) technology

The all selective metalorganic vapor-phase epitaxy (ASM) technique was adapted to 1.48 /spl mu/m wavelength EDFA pumping lasers, for the first time. In this technique, not only double-heterostructure mesa stripe but also current blocking layers are grown by selective metalorganic vapor-phase epitaxy (MOVPE) with no semiconductor etching and no melt-back phenomenon, which results in precise dimension control. The fabricated device successfully demonstrated excellent light output power characteristics uniformity, such as 262 mW average output power at 1A with a standard deviation of only 1.4 mW for twenty laser chips.