A new high-pressure system for synthesis and crystal growth of large diameter InP

An advanced high-pressure crystal growth system for one-step synthesis and growth has been constructed from a design based on numerical simulations and experiments. Experimental work reported previously, optimizing the one-step in-situ process for synthesis and growth, served as a basis for developing the new furnace. A global model developed to simulate growth conditions in the prototype system, has contributed to our understanding of complex transport phenomena such as thermoelastic strain and dopant incorporation. Using both the experimental and the simulation results, we have designed a system to produce large diameter, high purity, low defect density compound semiconductor crystals at low cost.