Ultra low inductance power module for fast switching SiC power devices

A novel packaging structure for high-speed switching silicon carbide (SiC) power modules has been proposed based on antiparalleled phase leg units. A prototype 1200 V-360 A SiC power module is developed using SiC-MOSFETs and SiC-SBDs and the very low parasitic inductance of 3.8 nH has been achieved. The experimental results show that the ultra-fast switching can be available owing to the very low parasitic inductance.