Polycrystalline CPP-GMR Pseudospin Valves Using $\langle {001}\rangle $ Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti0.5)O Buffer Layer

We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) using (001) textured Co
₂
Fe(Ga
_0.5
Ge
_0.5
) (CFGG) ferromagnetic layers grown on a conductive (Mg
_0.5
Ti
_0.5
)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400°C shows a resistance change-area (Δ R A) product of 6.6 mΩ μm
²
. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-alloy-based CPP-GMR device.