MoS2 Field-Effect Transistors With Lead Zirconate-Titanate Ferroelectric Gating

We report back gate field-effect transistors (FETs) with few-layered MoS
₂
nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The MoS
₂
transistors with PZT gating (MoS
₂
-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors with high stability, which can be attributed to the polarization screening from interface adsorbates and charge dynamic trapping/detrapping into the interface defect states. The ON/OFF states ratios and memory windows have little change with the channel scaling from 2
$\mu \text{m}$
to 200 nm, revealing the channel scaling has not obvious influence on MoS
₂
-PZT FET properties, which suggests MoS
₂
-PZT FET a promising candidate for future non-volatile memory applications.