Performance analysis of Ag:ZnO based UV MSM photodetectors prepared by sol-gel technique

This paper presents the fabrication and performance analysis of Zinc Oxide (ZnO) and Ag doped ZnO (SZO) based Metal-Semiconductor-Metal (MSM) ultraviolet (UV) photodetectors. The films were constructed on p-type silicon (Si) (100) substrates by sol-gel technique. Silver (Ag) electrodes were used as a Schottky contact for the fabricated devices. The structural, optical, and electrical properties for the fabricated films were studied and analyzed to show the effects of Ag dopants. With the applied voltage in the range of (-5 to 5 V) under dark condition, the values of the Schottky contact parameters were extracted and compared. Under UV illumination (254 nm) with different optical power levels, the performance parameters were extracted. The SEM image showed a non-uniform distribution of the Ag dopants, these dopants were formed clusters and this clusters acts as traps for the incident light. The saturation current was decreased for the device based on Ag doped ZnO film which enhanced the performance of the device.