Interface trap generation by FN injection under dynamic oxide field stress

Interface trap generation under dynamic (bipolar and unipolar) and dc oxide field stress has been investigated with the charge pumping technique. It is observed that regardless of stress type, whether dc or dynamic (bipolar or unipolar), and the polarity of stress voltage, interface trap generation starts to occur at the voltage at which Fowler-Nordheim (FN) tunneling through the oxide starts to build up. For positive voltage, interface trap generation is attributed to the recombination of trapped holes with electrons and to the bond breaking by the hydrogen (H and H/sup +/) released during stressing. For negative voltage, in addition to these two mechanisms, the bond breaking by energetic electrons may also contribute to interface trap generation. The frequency dependence of interface trap generation is also investigated. Interface trap generation is independent of stressing frequency for unipolar stress but it shows a frequency dependence for bipolar stress.