An 0.8-/spl mu/m high-voltage IC using a newly designed 600-V lateral p-channel dual-action device on SOI

A novel lateral power device, termed a p-channel dual-action device (p-ch DAD), is proposed and experimentally demonstrated in action. This device is based on a new dual-action mechanism. The new device has successfully increased on-state current without lowering the device breakdown voltage. The 600-V level-shifting action of the p-ch DAD has been confirmed by a circuit experiment. A newly designed p-ch DAD on the silicon on insulator can be made by adding four additional masks and trench technology to a 0.8-/spl mu/m CMOS process. Moreover, the process we have developed is completely compatible with an existing 5-V 0.8-/spl mu/m CMOS process.