A Novel Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor With Dual Trenches for Three-Phase Single Chip Inverter ICs

A silicon-on-insulator lateral insulated gate bipolar transistor with dual trenches located under the high voltage interconnection (HVI), which can be used in 500 V three-phase single chip inverter ICs, is proposed in this letter for the first time. Using the dual trenches to sustain the electric potential from the collector region, the electric field crowding induced by HVI at the silicon surface can be alleviated. The influence of HVI can be shielded completely by adjusting the position and spacing of the trenches. The experimental results show that the breakdown voltage of the proposed structure is 550 V and its latch-up voltage (
$\text{V}_{\mathrm {\mathbf {LP}}})\vphantom {\big ({}}$
at gate-emitter voltage of 15 V (
$\text{V}_{\mathrm {\mathbf {GE}}} = 15$
V) is higher than 500 V. The current density (
$\text{J}_{\mathrm {\mathbf {C}}})$
is 129 A/cm
$^{\mathrm {\mathbf {2}}}$
when
$\text{V}_{\mathrm {\mathbf {GE}}} = 5$
V and collector-emitter voltage (
$\text{V}_{\mathrm {\mathbf {CE}}})$
is 3 V. The turn OFF time (
$\text{t}_{\mathrm {\mathbf {OFF}}})$
is 132 ns at turn OFF current density of 84 A/cm
$^{\mathrm {\mathbf {2}}}$
.