4H-SiC 15kV n-IGBT physics-based sub-circuit model implemented in Simulink/Matlab

A physics-based 15kV 4H-SiC n-IGBT sub-circuit model implemented in Simulink/Matlab is demonstrated in this work. Two-phase voltage ramp during the switching before and after punch through is well predicted. Simulated with a simple 4H-SiC Schottky diode model, the switching results is experimentally verified. The current bump during turn-off and current overshoot during turn-on are well-predicted and can be explained by the instantaneous output capacitances of the IGBT and Schottky diode. The computing speed for the full turn-on and off with stray inductance is approximately 2 minutes.