A two stage, monolithic integrated 200 mW HEMT amplifier for wireless ATM

For wireless LAN applications a compact two stage HEMT amplifier is designed and on-wafer measured with on-chip matching and bias networks. At 17.2 GHz the amplifier delivers 23.1 dBm saturated output power from a 3.3 V supply. At the 1 dB compression point of 20.4 dBm the amplifier has 13.1 dB gain. Measured performance of the amplifier proves the applicability up to 20 GHz. The amplifier having a low output reflection coefficient is suitable as driver stage for amplifiers with higher power outputs.