In0.53Ga0.47As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide

In this letter, we have investigated electrical properties of metal-oxide-semiconductor (MOS) gate stack of Pt/Y
₂
O
₃
/In
_0.53
Ga
_0.47
As under different annealing conditions. We have found that proper annealing step significantly improves MOS interfacial properties of Pt/Y
₂
O
₃
/In
_0.53
Ga
_0.47
As MOS capacitors. Finally, we have realized MOS interface with a low density of trap state (D
_it
) of 4 × 1012 eV
^-1
· cm
^-2
and hysteresis of 15 mV using postmetallization annealing at 350°C. Furthermore, we also first demonstrated In
_0.53
Ga
_0.47
As-on-insulator (-OI) transistors with Y
₂
O
₃
buried oxide layer using developed MOS interface. Fabricated In
_0.53
Ga
_0.47
As-OI transistors show good I-V characteristics and high peak mobility of ~2000 cm
²
/Vs.