A new latch-free LIGBT on SOI

A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. Breakdown voltage of over 200 V, on-state current density over 3 A/mm and latch-free operation is demonstrated.