Two-step planarized Al-Cu PVD process using long throw sputtering technology

In this paper, comprehensive studies on planarized Al alloy interconnect and contact plug technology using long-throw-sputtering (LTS) and two-step cold/hot Al flow technologies are presented. Experimental results demonstrate that LTS-based cold/hot Al PVD technology is capable of completely filling contact holes as small as 0.3 /spl mu/m and simultaneously planarizing the Al wiring at process temperatures as low as 420/spl deg/C. The wider process window and excellent Al(111) preferred texture suggest that this technology is an attractive alternative to conventional W/Al interconnect metallization.