In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at V
D
as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with g
m
=646 mS/mm, I
on
=1.03 A/mm, I
OFF
=1.13 µA/mm, I
ON
/I
OFF
∼106, SS=82 mV/dec at V
D
=0.5V were achieved. In addition, the Fin-HEMT also exhibited 3.2 times lower DIBL of 28mV/V. The dramatic improvement of device performance is due to the tensile stress induced by SiN passivation in the NC Fin-HEMT.