First demonstration of 15nm-WFIN inversion-mode relaxed-Germanium n-FinFETs with Si-cap free RMG and NiSiGe Source/Drain

This work demonstrates the feasibility of an inversion-mode relaxed Ge n-FinFET scaled down to 15-nm fin width and sub-40-nm gate length. CMOS-compatible processing steps such as STI formation, replacement metal gate (RMG), in-situ Phosphorus-doped raised-Source/Drain and a Ni-based contact scheme have been successfully implemented. This first industry-compatible Ge n-FinFET has a G
_M,SAT,EXT
/ SS
_SAT
of 250 μS.μm
^-1
/ 130 mV.dec
^-1
(at the targeted V
_DS
=0.5V) which is on par with accumulation-mode junction-less Ge n-FETs.