Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

Al
₂
O
₃
/AlGaN/GaN enhancement-mode metal-isolator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a partially recessed (Al) GaN barrier was realized by a fluorine plasma implantation/etch technique. By properly adjusting the RF power driving the fluorine plasma, the fluorine plasma is able to produce two desirable results: 1) a well-controlled slow dry etching for gate recess and 2) implanting fluorine ions into the AlGaN barrier. The fluorine ions become negatively charged in the barrier layer and induce a positive shift in the threshold voltage. The proposed MIS-HEMT exhibits a threshold voltage (
$V_{\mathrm {\mathbf {TH}}})$
of +0.6 V at a drain current of
$10~\mu \text{A}$
/mm, a maximum drive current of 730 mA/mm, an ON-resistance of
$7.07~\Omega \,\cdot \,$
mm, and an OFF-state breakdown voltage of 703 V at an OFF-state drain leakage current of
$1~\mu \text{A}$
/mm. From room temperature to 200 °C, the device exhibits a small negative shift of
$V_{\mathrm {\mathbf {TH}}}$
(
$\sim 0.5$
V) that is attributed to the high-quality dielectric/F-implanted-(Al) GaN interface and the partially recessed barrier.