InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding

InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not only as the bonding layer but also as electrodes. Our Fabry-Pérot lasers operate with a threshold current density of 520 A · cm
^-2
for the broad-area laser, and a threshold current of 110 mA for the ridge laser. The bonded lasers exhibit an InAs QD ground-state lasing at 1.3 μm at room temperature.