High-Frequency Performance of Trigate Poly-Si Thin-Film Transistors by Microwave Annealing

This letter investigates the high-frequency performance of trigate polycrystalline silicon thin-film transistors (poly-Si TFTs) using low temperature microwave annealing (MWA). MWA exhibits sufficient dopant activation efficiency, good short channel effect control, and a higher maximum oscillation frequency (f
_max
) of poly-Si TFTs than does rapid thermal annealing. In addition, MWA can fabricate nanoscale devices. Poly-Si TFTs with short channel annealed by microwave reveals better high-frequency performance and switching characteristics.