Analytical model of the subthreshold behavior in short-channel junctionless cylindrical surrounding-gate mosfets

In this paper, a new 2-D analytical potential model in the subthreshold regime for short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs is proposed as the source/drain depletion length taken into account. Then the analytical models for the threshold voltage (V
_th
), subthreshold slope (SS), and drain-induced barrier lowering (DIBL) are also derived from the potential relationship. The model is verified by the numerical simulation and results show good agreement with the simulations.