The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid

The manipulation of temperature coefficient of resistance (TCR) in TaN thin-film resistor (TFR) was demonstrated by electrical measurement and analysis through supercritical carbon dioxide (SCCO
₂
) fluid treatment for the first time. The negative TCR value of TaN TFR changes to positive TCR value through annealing process due to the growth and merge of TaN
_x
grain. After SCCO
₂
treatment, the positive TCR value was changed back to negative TCR value in TaN TFR. The TaN grain boundary isolated by dehydroxyl effect of SCCO
₂
fluid treatment causes the current conduction mechanism changed to hopping conduction from ohmic conduction.