Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices

In this paper the new methodology for fast 3-D electrothermal simulation of complex power devices including the package and cooling assemblies is proposed and illustrated. A power MOSFET under an unclamped inductive switching (UIS) test of the device robustness is used to perform validation of the designed electrothermal simulation. The presented simulation approach contributes to full analysis of complex structures at high speed of simulation and simplicity of implementation. The methodology is developed for co-simulation platform SMAC.