Low-temperature annealing of arsenic/phosphorus junctions

A model for damage enhancement that is suitable for two-dimensional simulation is proposed. The formation of arsenic and phosphorus junctions is an important process step in modern device fabrication. The accurate prediction of the vertical and lateral profile is crucial for optimization of the device behavior and reliability. Experimental data show that the damage from implantation of the dopant species has an important and controlling effect on the final profile during low-temperature annealing. Modeling of the dopant and point defect interaction during this anneal indicates that the junction is determined by the number of point defects created during the implantation. Calibration is performed by using one-dimensional experimental work on both boron and arsenic/phosphorus junctions. Two-dimensional calculations are performed and compared to experimental device data.<
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