Extraction of carrier transport properties in graphene from microwave measurements

Carrier transport parameters of graphene grown by chemical vapor deposition (CVD) and graphene-metal contacts are extracted from microwave measurements in the frequency range 0.1-20 GHz using Corbino disks. It is shown that the charged impurities are effectively screened by the high permittivity of the SrTiO
₃
substrate. In the case of fused silica substrate the charged impurities are not completely screened and the mobility is limited either by the charged impurities or/and resonant scatterers depending on their relative concentration.