Critical evaluation of uniformity and contamination in porous silicon SOI wafers

Summary form only given. Three aspects of porous silicon (PS) formation that could affect its compatibility with VLSI manufacturing processes are evaluated: (1) chemical contamination, (2) particulate contamination, and (3) PS uniformity. Porous silicon anodization equipment and procedures developed to optimize the uniformity of porous silicon-based SOI wafers are also described. Inductively coupled plasma atomic emission spectroscopy and surface-scan measurements indicate there is no significant chemical or particle contamination associated with the porous silicon process.<
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