Constructive methods of functioning assurance of memory microcircuits at radiation influence

The results of experimental researches of protective properties of screens on the basis of coverings Bi/Sb and composite tungsten-copper (W75Cu25) at 1.8 MeV electron irradiation of microcircuits of programmable ROM 256 K are submitted. It is found that application of these coverings allows increasing hardness of ROM to 1.8 MeV electron radiation by factor of 13–16 to fluences Fe = (3 ÷ 6)·1014 cm−2. Calculation equivalent values of fluences Fρ = (2.25 ÷ 4.5)·1013 cm−2 of 23.3 MeV proton radiation, wherein be assured of ROM functioning with specified screen arrangement are defined.