Simulation of nanoscale structures based on carbon materials

Nanoscale structures based on carbon materials are simulated using the developed numerical models. A functionally integrated structure combining resonant tunneling diode and field-effect transistor based on single carbon nanotube (RTD-FET) is studied. It is found that RTD-FET will have significantly different N-shaped current-voltage characteristics depending on the chirality of the used nanotube. Current-voltage characteristics of a resonant tunneling nanostructure based on graphene are also calculated.