Voltage measurement in GaAs Schottky barriers using optical phase modulation

What are thought to be the first measurements of applied voltage in a GaAs Schottky-barrier diode using optical phase modulation are presented. A theoretical model, based on the refractive-index perturbation in a Schottky-barrier depletion region, describing these measurements was derived and gives good agreement with the observe results. The large signal response and large frequency response of the measurement system are illustrated. This technique facilitates high-sensitivity measurements of voltages in integrated Schottky diodes.<
>