A 0.5-6 GHz high gain low noise MMIC amplifier

A high-gain, low-noise-figure, 0.5-6.0 GHz MMIC amplifier designed for system applications has been developed. The amplifier advances the state of the art because it is the first such MMIC to offer 24-dB minimum gain and under a 2.5-dB noise figure across its entire bandwidth. Gain flatness is less than +or-0.5 dB, while input and output VSWRs are both less than 2.0:1. The chip requires at most a single external resistor for biasing, as all blocking and bypass capacitors are on chip, making it extremely easy to use. The MMIC amplifier is fabricated using 0.5- mu m MBE MESFET technology and contains three 600- mu m FETs on a 1.52 mm*1.52 mm chip. The combination of wideband performance, small chip size, and ease of use make this MMIC amplifier ideal for many applications in the low microwave frequency range.<
>