Low current enhancement mode MMICs for portable communication applications

A successful application of GaAs enhancement mode MESFET technology has been demonstrated for a portable communication system. A description is given of a single-stage enhancement mode FET amplifier dissipating about 10 mW of power and achieving a gain of 10 dB with a return loss of 14 dB at 900 MHz. This completely monolithic amplifier was unconditionally stable inside and outside the frequency band. High- and low-temperature performance of the amplifier is also reported. The circuit was tested at 70 degrees C and at -20 degrees C to study the temperature dependence of the circuit. While no appreciable degradation was observed at 70 degrees C, a drop in gain of about 2 dB was noticed at -20 degrees C.<
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