A soft error improved 7 ns/2.1-W GaAs 16-kb SRAM

A GaAs 4 K*4 b SRAM (static RAM) with improved alpha particle immunity is presented. By using a novel circuit technology and a buried p-layer FET, the critical charge of the memory cell has been increased and the collected charge decreased. The soft error rate of a 16-kb SRAM is reduced by about four orders of magnitude compared to that of a GaAs 4-kb SRAM consisting of conventional memory cells; it is also less than that of the commercially available silicon 1-kb ECL RAM. An address access time of 7.0 ns with 2.1-W power dissipation has been obtained at 75 degrees C. The RAM operates at the single supply voltage of 1.8 V.<
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