Influence of absorbed water on electronic transport in organosilicon plasma polymers

Studies of the influence of strongly bound water on electrical properties of plasma-deposited organosilicon films indicate that two types of hopping centers exist in the films. The first type can be destroyed by water molecules and the second is stable. In SiNSi films both types of hopping centers exist, but in SiOSi films only the second type exists. However, in both SiNSi and SiOSi films, water molecules activate initially inactive intrinsic acceptor centers. As a result the electrical conductivity increases in organosilicon films in the presence of absorbed water.<
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