Fabrication of a novel TiO2/CNT based transistor

What we present is fabrication of a novel TiO₂/CNT based transistor. Vertically aligned CNTs have been grown on a silicon substrate. The CNTs were then encapsulated by TiO₂ nanoparticles, which act as the gate material and are responsible for controlling the field emission current from CNTs. The field emitted electron beam can also be used for lithography, where the diameter of beam can be controlled by gate voltage.