Systematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instability

We experimentally study the random telegraph noise (RTN) in nanowire transistor (NW Tr.) with various widths (W), lengths (L), and heights (H). Time components of RTN such as time to capture (τ
_c
) and emission (τ
_e
) are independent of NW size, while threshold voltage fluctuation (ΔV
_th
) by RTN can be well fitted with 1/{L(W+2H)}
^0.5
corresponding to the conventional carrier number fluctuations regardless of the side surface orientation. Hot carrier injection (HCI) and negative bias temperature instability (NBTI) induced additional carrier traps leading to the increase in the number of observed RTN. Moreover, ΔV
_th
is enhanced by HCI and NBTI and enhancement of ΔV
_th
becomes larger in narrower W.