III–V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si

We propose and demonstrate the operation of single structure III-V CMOS transistors by using metal S/D ultrathin body (UTB) InAs/GaSb-on-insulator (-OI) channels on Si wafers. It is found that the CMOS operation of the InAs/GaSb-OI channel is realized by using ultrathin InAs layers, because of the quantum confinement of the InAs channel and the tight gate control. The quantum well (QW) InAs/GaSb-OI on Si structures are fabricated by using direct wafer bonding (DWB). We experimentally demonstrate both n- and p-MOSFET operation for an identical InAs/GaSb-OI transistor by choosing the appropriate thickness of InAs and GaSb channel layers. The channel mobilities of both InAs n- and GaSb p-MOSFET are found to exceed those of Si MOSFETs.