InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal resistance measurements on a 0.8 × 6 μm
²
DHBT, a low thermal resistance of 1625 K/W is obtained, 65 % lower than for the same device fabricated on its own substrate of InP and which exhibited a value of 4452 K/W.