A 1.2ns H EMT 64kb SRAM

This 1.2ns ECL-compatible high electron mobility transistor (HEMT) 64kb SRAM is fabricated using 0.6µm HEMTtechnology. An additional supply voltage of -1.0V for the DCFL and an EID type source follower buffer for a word driver circuit reduce power dissipation. The chip size has been reduced by refined design rules and use of a double-etch-stop process.