A new method of designing UHF FET Colpitts oscillator

This paper describes a newly developed design method of UHF field-effect transistor (FET) Colpitts oscillator minimizing the phase noise and total harmonic distortion (THD) of the generated signal. A new simple procedure is used to calculate the values of the oscillator components. The proposed method has been applied to the design and simulation of the Colpitts oscillator operating with a pseudomorphic heterojunction FET (PHJFET) at frequency of 1GHz. The simulated phase noise is −148.8dBc/Hz at 1 MHz offset from the carrier frequency. The THD is 4.2%. The power consumption is 2.4mW from a 3V supply. The implemented oscillator circuit confirms the efficiency of the proposed design method.