Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO3 Resistive Switching Memories

In this letter, we present a study of the SET kinetics of bipolar switching SrTiO
₃
-based resistive memory devices. Pulse measurements on a timescale from 1 μs to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly nonlinear correlation between voltage and time. An analytical model is presented that explains the interrelation of both experiments by a comparative analysis of the current- voltage characteristics.