High-voltage double-pulsed measurement system for GaN-based power HEMTs

A fully customable high-voltage pulsed system capable of double-pulsed I–V and time-resolved drain-current transient characterization from 1µs- to 100s-range is presented. The system allows a comprehensive characterization of the charge-trapping phenomena affecting the dynamic performances of GaN-based power HEMTs under high-voltage operational biases. We discuss the main issues of a high-voltage pulsed- and transient-characterization, and propose solutions for reliable measurements and data acquisition. Moreover, we demonstrate the effectiveness of the system through the description of a case-study which highlights the importance of high-voltage time-resolved characterization.