Wafer-level selective transfer method for FBAR-LSI Integration

This paper reports the wafer-bonding-based integration of heterogeneous devices with different die sizes by laser-assisted selective device transfer technique. 1 mm × 1 mm FBAR (film bulk acoustic resonator) dies supported with a glass wafer were selectively transferred to a wafer of 2 mm × 2 mm BiCMOS sustaining amplifiers by low temperature Au-Au bonding. The FBAR dies left on the support glass wafer were transferred to other BiCMOS wafers, and 4 times of integration were done in total using the same FBAR wafer. The integrated device worked as a chip-size-packaged 2 GHz timing oscillator, and a phase noise of −103 dBc/Hz at 10 kHz offset and −155 dBc/Hz at 1 MHz offset was confirmed.