600V single chip inverter IC with new SOI technology

A 600V three-phase single chip inverter IC has been developed using a new SOI technology instead of conventional 500V Dielectric Isolation (DI) technology. In this new technology, 600V high voltage devices were materialized with a newly introduced poly-Si field plate and a multi diffusion region in order to reduce the electric field. A new IGBT accomplishes high current density with an on-resistance of 1.8Ωmm
²
by using a multi emitter structure and an n-type well layer that reduces JFET resistance between emitter channels. Moreover, a thin Si layer and universal contact structure for fast extraction of excess carriers contribute to low switching losses. The turn-off energy loss of the IGBT is 54% of that of a conventional one at 135°C. The developed inverter IC has a maximum output voltage of 600V and a maximum output current 1A. Compared to the conventional 500V IC, the operational power consumption is reduced from 2.6W to 2.3W.