A Bi-directional Electric Field Enhanced Field Stop Reverse Blocking IGBT

In this paper, a novel Bi-directional Electric Field Enhanced Field Stop Reverse Blocking Insulated Gate Bipolar Transistor (BEFE-FS-RB-IGBT) is proposed. It features N-type field stop layers and P-type electric field enhancement regions in both top trench MOS cell part and the anode side of the device. From the simulation results, the thickness of the drift region can be reduced to 58μm, only 70% of the conventional counterpart, while maintaining 820V and 818V in forward and reverse blocking conditions, respectively. The blocking capability is 15% higher than the conventional one. Moreover, due to the carrier-storage effect, the carrier distribution during the on-state can be optimized. As a result, the proposed one has a lower on-state voltage (1.15V, 20% drop) and a less turn-off power loss (5.4mJ/cm
²
, 39% decrease) as well.