New modular high voltage LDMOS technology based on Deep Trench Isolation and 0.18um CMOS platform

This paper presents the challenges of integrating 70V and 45V lateral DMOS transistor modules into a 0.18um base line process. This integration is achieved with minimal impact on baseline process and circuit IP's. Multi-epitaxial stack and Deep Trench Isolation (DTI) modules assure up to 140V isolation capability between different areas in the chip.