P2S5/(NH4)2Sx-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs

Ultrashallow junctions that are abrupt and have low resistance are needed for the source/drain extensions (SDEs) of MOSFETs at future technology nodes. In addition, the use of 3-D devices, such as FinFETs or nanowire FETs, will require a doping process that is conformal. In this paper, we discuss P
₂
S
₅
/(NH
₄
)
₂
S
_x
-based doping for potential use in the formation of SDEs for n-channel InGaAs FETs. MOSFETs with source and drain formed using this doping technique are demonstrated. The effect of the dopant activation step on device performance is also studied.