A 3.4 V, 1 watt cellular DAMPS GaAs MESFET power amplifier with 50% efficiency

A 3.4 V, 1 W cellular DAMPS power amplifier with 50% efficiency has been implemented and tested. The single-supply PA incorporates biasing, PMOS interface, and negative supply voltage generation on-chip, and is assembled in a TSSOP20 package with a downset paddle. The circuit achieves 30 dB of power gain, a 12 dB input return loss, and is implemented in a 20 GHz ion-implanted GaAs MESFET manufacturing process.