Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise

The low-frequency noise of n-channel InGaAs MOSFETs with Al
₂
O
₃
gate dielectric has been studied to assess the impact of a S-passivation treatment on the border trap (BT) density. It is shown that the spectra are predominantly \(1/f\) -like, while the normalized noise power spectral density (PSD) behaves according to the number fluctuations theory. The BT density derived from the input-referred voltage noise PSD exhibits a flat depth profile for the three processing conditions studied, with a pronounced reduction due to the S treatment. Additional excess \(1/f\) and generation-recombination noise sources are found as well, which are more related to the epitaxial material.