A compact and unified MOS DC current model with highly continuous conductances for low-voltage ICs

A unified approach for the MOS transistor drain current modeling through all the operation regions is presented. Instead of the direct sum approach, the proposed use of interpolation and sigmoid functions can unify the drain current expression including the drift and diffusion components for the weak- and strong-inversion regions. This approach results in a differentiable continuity in conductances with respect to the gate, drain, and bulk bias voltages. As verified by the experimental data, the model shows an accurate prediction capability for the transconductance and output conductance characteristics in both strong- and weak-inversion regions.