Radio Frequency Current-Voltage Curve Including Breakdown Effect Implemented in Large Signal Model for Validation

A metal-oxide-semiconductor field-effect transistor (MOSFET) radio frequency current-voltage (RF I-V) curve with the drain breakdown effect considered is demonstrated for the first time. The validity of the presented approach is extended to the breakdown region by including the breakdown conductance when realizing the RF I-V curve. The presented RF I-V is verified by implementing this curve into a large signal model, and then the simulated output spectrum can agree well with the measured results. Therefore, this accurate breakdown RF I-V can provide a guideline for output performance analysis and RF circuit design.